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Wafer with patterned metallization
Sputtered TiN, NbN metallization
Organization name
VTT-Technical Research Centre of Finland Ltd
Service
Qu-Pilot
Description
This process is suitable for fabrication of patterned high-kinetic inductance layers used, e.g., as superinductors. VTT can fabricate titanium nitride and niobium nitride films with varying nitrogen concentration. As part of this service, microwave loss can also be evaluated through resonator Q value measurements carried out by VTT. Specifications: Standard chip sizes: 2.5 mm x 2.5 mm, 2.5 mm x 5.0 mm, 5.0 mm x 5.0 mm, 10 mm x 5.0 mm, 10 mm x 10 mm (others on case-by-case basis) Non-metallized area at chip perimeter: ≥ 50 µm Metallization line width: ≥ 1.0 µm Slit width: ≥ 0.8 µm Metallization line width reproducibility: ± 0.075 µm
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Infrared micrograph of two flip-chip bonded silicon chips with titanium nitride lines.
Document 1
Document 2
Applications
Sensing
Computing
Communication
TRL
5
Platform
Superconducting
Offering type
Prototyping
Fabrication
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