Wafer with patterned metallization
Wafer with patterned metallization
Sputtered TiN, NbN metallization
VTT-Technical Research Centre of Finland Ltd
Qu-Pilot
This process is suitable for fabrication of patterned high-kinetic inductance layers used, e.g., as superinductors. VTT can fabricate titanium nitride and niobium nitride films with varying nitrogen concentration. As part of this service, microwave loss can also be evaluated through resonator Q value measurements carried out by VTT. Specifications: Standard chip sizes: 2.5 mm x 2.5 mm, 2.5 mm x 5.0 mm, 5.0 mm x 5.0 mm, 10 mm x 5.0 mm, 10 mm x 10 mm (others on case-by-case basis) Non-metallized area at chip perimeter: ≥ 50 µm Metallization line width: ≥ 1.0 µm Slit width: ≥ 0.8 µm Metallization line width reproducibility: ± 0.075 µm
Titanium nitride traces in a flip-chip module
Infrared micrograph of two flip-chip bonded silicon chips with titanium nitride lines.
Sensing Computing Communication
5
Superconducting 
Prototyping  Fabrication