3 µm thick Si waveguides and passive components, including single-mode circuits with low losses and small footprint suitable for dense PICs with polarization independent components and circuits. Packaging and integration with active components (waveguide integrated Ge PDs). Specifications:Ultra-broadband operation wavelength: 1.2 µm -4 µm , Buried oxide layer thickness: 0.4 µm -3um, oxide cladding layer: 0.2 µm -1um, waveguide loss: single mode rib waveguide: ~0.027 dB/cm, Multi-mode strip waveguide: ~0.04 dB/cm