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Schematic lab setup for 1550-nm SPAD characterisation
Schematic lab setup for 1550-nm SPAD characterisation
Telecom single-photon detector characterization
Fraunhofer IAF
Qu-Test
Laborarory setup for electrooptical characterisation of III-V photodetectors on chip level, especially InGaAs/InP pin-PDs, APDs, and SPADs, with respect to dark current/count characteristics, spectral responsivity, photon-detection efficiency, afterpulsing etc.; chip size < 10 x 10 mm²; pulsed laser wavelength: 1550 nm; cryogenic cooling option, temperature range: 77 - 300 K.
III-V SPAD devices and process test structures
III-V SPAD devices and process test structures
Sensing Communication
4
Photonics 
Prototyping  Testing  Measurements
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