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Cryogenic wafer prober
Cryogenic wafer prober
III-V photodetector characterisation
Fraunhofer IAF
Qu-Test
Semi-automatic cryogenic wafer prober for I-V characterisation of III-V photodetectors, especially InGaAs/InP pin-PDs, APDs, and SPADs. Wafer diameters: 76.2 mm (3 inch), 100 mm (4 inch); multi-project wafer compatibility; cryogenic cooling option, temperature range: 77 - 300 K.
3-inch (76.2-mm) wafer with III-V photodetector devices
3-inch (76.2-mm) wafer with III-V photodetector devices
III-V photodetector devices
III-V photodetector devices
Sensing Communication
4
Photonics 
Prototyping  Measurements
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