The offered development services of III-V photonic components aim particularly for APDs and SPADs for the short-wave infrared spectral bands with detection wavelengths around 1550 nm. For this purpose, Fraunhofer IAF can draw on its long-standing III-V epitaxy and process technology for the InGaAs/InP-based material system. The fabricated detector devices can be I-V characterised on-wafer and electro-optically characterised on-chip in a dedicated lab setup. Epitaxial growth and process technology of III-V optoelectronic components, especially InGaAs/InP pin-PDs, APDs, and SPADs. Wafer diameters: 76.2 mm (3 inch), 100 mm (4 inch), multi-project wafer compatible